64-0188-55 ［Discontinued］FQD2N80TM N-Channel MOSFET, 1.8 A, 800 V QFET, 3-Pin DPAK ON Semiconductor FQD2N80TM
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［Discontinued］FQD2N80TM N-Channel MOSFET, 1.8 A, 800 V QFET, 3-Pin DPAK ON Semiconductor FQD2N80TM 64-0188-55 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-0188-55 ［Discontinued］FQD2N80TM N-Channel MOSFET, 1.8 A, 800 V QFET, 3-Pin DPAK ON Semiconductor FQD2N80TM
Features
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
仕様
- Quantity:1bag(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:1.8 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:6.3 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Length:6.6mm
- CODE No.:166-1793
アズワン品番 64-0188-55 型番 FQD2N80TM 標準価格 JPY: 145,560 USD: 905.67 Excange rate 1USD= 160.72JPY
Valid price in Japan入り数 1bag(2500pieces) 
在庫数 - -
