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64-0188-47　FQD19N10LTM N-Channel MOSFET, 15.6 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD19N10LTM

Features

  • QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:15.6 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:100 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Number of Elements per Chip:1
  • CODE No.:671-0970
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Order No. 64-0188-47
Model No. FQD19N10LTM
Standard price JPY: 1,530 USD: 9.59
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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