ON Semiconductor

64-0188-43　［Discontinued］FQD13N10TM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD13N10TM

Features

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

Quantity:1bag(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:10 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:180 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.5 W
Minimum Operating Temperature:-55 °C
CODE No.:146-2065

Order No.Order No.ss="init"> ［Discontinued］FQD13N10TM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD13N10TM 64-0188-43 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-0188-43　［Discontinued］FQD13N10TM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD13N10TM

印刷

特徴

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:10 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:180 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.5 W
Minimum Operating Temperature:-55 °C
CODE No.:146-2065

アズワン品番	64-0188-43
Model No.	FQD13N10TM
標準価格	JPY: 199,000 USD: 1,248.28 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(2500pieces)

Stock in Japan	-

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CategoriesCategoriesit"> ［Discontinued］FQD13N10TM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD13N10TM 64-0188-43 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-0188-43　［Discontinued］FQD13N10TM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD13N10TM

印刷

特徴

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:10 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:180 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:2.5 W
Minimum Operating Temperature:-55 °C
CODE No.:146-2065

アズワン品番	64-0188-43
型番	FQD13N10TM
標準価格	JPY: 199,000 USD: 1,248.28 Excange rate 1USD= 159.42JPY Valid price in Japan
入り数	1bag(2500pieces)

在庫数	-

[$1]［Discontinued］FQD13N10TM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor[/$1]