64-0188-38 ［Discontinued］FQB6N80TM N-Channel MOSFET, 5.8 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB6N80TM
Features
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:5.8 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:1.95 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.13 W
- Transistor Material:Si
- CODE No.:166-2537
| Order No. | 64-0188-38 | |
|---|---|---|
| Model No. | FQB6N80TM | |
| Standard price |
JPY: 118,370
USD: 742.50
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(800pieces) | |
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| Stock in Japan | - | |