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64-0188-37　［Discontinued］FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor　FQB8N60CTM

Features

  • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1piece/bag
  • Channel Type:N
  • Maximum Continuous Drain Current:7.5 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:1.2 Ω
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:3.13 W
  • Series:QFET
  • CODE No.:671-0924
  •  
Order No. 64-0188-37
Model No. FQB8N60CTM
Standard price JPY: 220 USD: 1.38
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece/bag
  Discontinued
Stock in Japan -

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