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Contact usSearchlass="init"> [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM 64-0188-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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  • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
  • AXEL GLOBALAXEL GLOBALnit"> [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM 64-0188-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

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    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
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    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
    ON Semiconductor

    64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

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    • [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

    FeaturesFeatures class="init"> [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM 64-0188-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
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    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
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    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
    ON Semiconductor

    64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

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    • [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

    Features

    • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

    Spec

    • Quantity:1piece/bag
    • Channel Type:N
    • Maximum Continuous Drain Current:7.5 A
    • Maximum Drain Source Voltage:600 V
    • Maximum Drain Source Resistance:1.2 Ω
    • Minimum Gate Threshold Voltage:2V
    • Maximum Gate Source Voltage:-30 V, +30 V
    • Package Type:D2PAK (TO-263)
    • Mounting Type:Surface Mount
    • Transistor Configuration:Single
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:3.13 W
    • Series:QFET
    • CODE No.:671-0924
    •  
    Order No. 64-0188-37
    Model No.Model No. class="init"> [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM 64-0188-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
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    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
    • AXEL GLOBAL
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    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
    ON Semiconductor

    64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

    • 印刷
    • PDF
    • [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

    特徴

    • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

    仕様

    • Quantity:1piece/bag
    • Channel Type:N
    • Maximum Continuous Drain Current:7.5 A
    • Maximum Drain Source Voltage:600 V
    • Maximum Drain Source Resistance:1.2 Ω
    • Minimum Gate Threshold Voltage:2V
    • Maximum Gate Source Voltage:-30 V, +30 V
    • Package Type:D2PAK (TO-263)
    • Mounting Type:Surface Mount
    • Transistor Configuration:Single
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:3.13 W
    • Series:QFET
    • CODE No.:671-0924
    •  
    アズワン品番 64-0188-37
    型番 FQB8N60CTM
    標準価格 JPY: 220 USD: 1.38
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    Quantity 1piece/bag
      DiscontinuedDiscontinuedlass= [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM 64-0188-37 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    取扱点数300万点
    How to use
    Cách sử dụng
    Contact us
    すべてのカテゴリ
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
    • AXEL GLOBAL
    • カテゴリ一覧
    • Lab Instruments & Supplies
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    • RS Components
    • 64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM
    ON Semiconductor

    64-0188-37 [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

    • 印刷
    • PDF
    • [Discontinued]FQB8N60CTM N-Channel MOSFET, 7.5 A, 600 V QFET, 3-Pin D2PAK ON Semiconductor FQB8N60CTM

    特徴

    • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

    仕様

    • Quantity:1piece/bag
    • Channel Type:N
    • Maximum Continuous Drain Current:7.5 A
    • Maximum Drain Source Voltage:600 V
    • Maximum Drain Source Resistance:1.2 Ω
    • Minimum Gate Threshold Voltage:2V
    • Maximum Gate Source Voltage:-30 V, +30 V
    • Package Type:D2PAK (TO-263)
    • Mounting Type:Surface Mount
    • Transistor Configuration:Single
    • Channel Mode:Enhancement
    • Category:Power MOSFET
    • Maximum Power Dissipation:3.13 W
    • Series:QFET
    • CODE No.:671-0924
    •  
    アズワン品番 64-0188-37
    型番 FQB8N60CTM
    標準価格 JPY: 220 USD: 1.38
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    入り数 1piece/bag
      <!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->
    在庫数 -

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