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64-0188-32　FQB55N10TM N-Channel MOSFET, 55 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB55N10TM

Features

  • QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:55 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:26 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:3.75 W
  • Typical Turn-Off Delay Time:110 ns
  • CODE No.:671-0914
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Order No. 64-0188-32
Model No. FQB55N10TM
Standard price JPY: 2,320 USD: 14.54
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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