64-0188-28 ［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM
Features
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
SpecSpec class="init">
［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM 64-0188-28 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
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ON Semiconductor
64-0188-28 ［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM
-
特徴
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:3.6 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.13 W
- Typical Turn-Off Delay Time:35 ns
- CODE No.:671-0908
-
Order No.
64-0188-28
Model No.Order No.ss="init">
［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM 64-0188-28 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
ON Semiconductor
64-0188-28 ［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM
-
特徴
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
仕様
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:3.6 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.13 W
- Typical Turn-Off Delay Time:35 ns
- CODE No.:671-0908
-
アズワン品番
64-0188-28
Model No.
FQB4N80TM
標準価格
JPY: 530
USD: 3.30
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1piece/bag
Stock in Japan
-
64-0188-28 ［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM
特徴
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:3.9 A
- Maximum Drain Source Voltage:800 V
- Maximum Drain Source Resistance:3.6 Ω
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.13 W
- Typical Turn-Off Delay Time:35 ns
- CODE No.:671-0908
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Model No.Order No.ss="init">
64-0188-28 ［Out of stock］FQB4N80TM N-Channel MOSFET, 3.9 A, 800 V QFET, 3-Pin D2PAK ON Semiconductor FQB4N80TM特徴
仕様
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