64-0188-23 [Discontinued]FQB34N20LTM N-Channel MOSFET, 31 A, 200 V QFET, 3-Pin D2PAK ON Semiconductor FQB34N20LTM
Features
- QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(800pieces)
- Channel Type:N
- Maximum Continuous Drain Current:31 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:75 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.13 W
- Maximum Operating Temperature:+150 °C
- CODE No.:166-2532
| Order No. | 64-0188-23 | |
|---|---|---|
| Model No. | FQB34N20LTM | |
| Standard price |
JPY: 132,660
USD: 831.57
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(800pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FQB34N20LTM N-Channel MOSFET, 31 A, 200 V QFET, 3-Pin D2PAK ON Semiconductor FQB34N20LTM](https://aimg.as-1.co.jp/c/64/0188/23/64018823.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)