64-0188-19 ［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM
FeaturesFeatures class="init">
［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM 64-0188-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
ON Semiconductor
64-0188-19 ［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM
-
Features
- QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:33 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:52 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.75 W
- Typical Turn-Off Delay Time:80 ns
- CODE No.:671-0889
-
Order No.Order No.ss="init">
［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM 64-0188-19 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
ON Semiconductor
64-0188-19 ［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM
-
特徴
- QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
仕様
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:33 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:52 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.75 W
- Typical Turn-Off Delay Time:80 ns
- CODE No.:671-0889
-
Order No.
64-0188-19
Model No.
FQB33N10TM
Standard price
JPY: 840
USD: 5.27
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(5pieces)
Stock in Japan
-
64-0188-19 ［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM
Features
- QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:33 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:52 mΩ
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Pin Count:3
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.75 W
- Typical Turn-Off Delay Time:80 ns
- CODE No.:671-0889
Order No.Order No.ss="init">
64-0188-19 ［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor FQB33N10TM特徴
仕様
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