ON Semiconductor

64-0188-18　［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM

印刷

特徴

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(800pieces)
Channel Type:N
Maximum Continuous Drain Current:33 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:52 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:D2PAK (TO-263)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:3.75 W
Typical Input Capacitance @ Vds:1150 pF@ 25 V
CODE No.:166-1752

Order No. 64-0188-18

型番 FQB33N10TM

Standard priceStandard pricess="init"> ［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM 64-0188-18 【AXEL GLOBAL】 アズワン

取扱点数300万点

How to use

Quote Other Requests

ON Semiconductor

64-0188-18　［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM

印刷

特徴

QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity:1bag(800pieces)
Channel Type:N
Maximum Continuous Drain Current:33 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:52 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-25 V, +25 V
Package Type:D2PAK (TO-263)
Mounting Type:Surface Mount
Transistor Configuration:Single
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:3.75 W
Typical Input Capacitance @ Vds:1150 pF@ 25 V
CODE No.:166-1752

アズワン品番	64-0188-18
型番	FQB33N10TM
標準価格	JPY: 75,520 USD: 473.72 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1bag(800pieces)

在庫数	-

[$1]［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor[/$1]

64-0188-18　［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM

Features

Spec

64-0188-18　［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM

特徴

仕様

64-0188-18　［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM

特徴

仕様