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64-0188-18　［Discontinued］FQB33N10TM N-Channel MOSFET, 33 A, 100 V QFET, 3-Pin D2PAK ON Semiconductor　FQB33N10TM

Features

  • QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(800pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:33 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:52 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-25 V, +25 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:3.75 W
  • Typical Input Capacitance @ Vds:1150 pF@ 25 V
  • CODE No.:166-1752
  •  
Order No. 64-0188-18
Model No. FQB33N10TM
Standard price JPY: 75,520 USD: 473.39
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(800pieces)
  Discontinued
Stock in Japan -

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