ON Semiconductor

64-0188-11 FQB12P20TM P-Channel MOSFET, 11.5 A, 200 V, 3-Pin D2PAK ON Semiconductor FQB12P20TM

Features

  • Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control

Spec

  • Quantity:1bag(800pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:11.5 A
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:470 mΩ
  • Minimum Gate Threshold Voltage:3V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:3.13 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:166-2528
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Order No. 64-0188-11
Model No. FQB12P20TM
Standard price JPY: 175,000 USD: 1,096.97
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(800pieces)
Stock in Japan
Supplier Stock