64-0188-11 FQB12P20TM P-Channel MOSFET, 11.5 A, 200 V, 3-Pin D2PAK ON Semiconductor FQB12P20TM
Features
- Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control
Spec
- Quantity:1bag(800pieces)
- Channel Type:P
- Maximum Continuous Drain Current:11.5 A
- Maximum Drain Source Voltage:200 V
- Maximum Drain Source Resistance:470 mΩ
- Minimum Gate Threshold Voltage:3V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:D2PAK (TO-263)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:3.13 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-2528
| Order No. | 64-0188-11 | |
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| Model No. | FQB12P20TM | |
| Standard price |
JPY: 175,000
USD: 1,096.97
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(800pieces) | |
| Stock in Japan |
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| Supplier Stock |
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