64-0188-03 ［Discontinued］FDS9953A Dual P-Channel MOSFET, 2.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS9953A
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［Discontinued］FDS9953A Dual P-Channel MOSFET, 2.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS9953A 64-0188-03 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-0188-03 ［Discontinued］FDS9953A Dual P-Channel MOSFET, 2.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS9953A
Features
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:2.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:130 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-2632
Order No.Order No.ss="init"> ［Discontinued］FDS9953A Dual P-Channel MOSFET, 2.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS9953A 64-0188-03 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-0188-03 ［Discontinued］FDS9953A Dual P-Channel MOSFET, 2.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS9953A
特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(2500pieces)
- Channel Type:P
- Maximum Continuous Drain Current:2.9 A
- Maximum Drain Source Voltage:30 V
- Maximum Drain Source Resistance:130 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-25 V, +25 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Minimum Operating Temperature:-55 °C
- CODE No.:166-2632
アズワン品番 64-0188-03 型番 FDS9953A Standard price JPY: 121,000 USD: 759.00 Excange rate 1USD= 159.42JPY
Valid price in Japan入り数 1bag(2500pieces) 
Stock in Japan - -
