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ON Semiconductor

64-0187-52　［Discontinued］FDS6575 P-Channel MOSFET, 10 A, 20 V PowerTrench, 8-Pin SOIC ON Semiconductor　FDS6575

Features

  • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1bag(2500pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:10 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:13 mΩ
  • Minimum Gate Threshold Voltage:0.4V
  • Maximum Gate Source Voltage:-8 V, +8 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Minimum Operating Temperature:-55 °C
  • CODE No.:166-1788
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Order No. 64-0187-52
Model No. FDS6575
Standard price JPY: 261,000 USD: 1,636.06
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(2500pieces)
  Discontinued
Stock in Japan -

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