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ON Semiconductor

64-0187-46　FDS3672 N-Channel MOSFET, 7.5 A, 100 V UltraFET, 8-Pin SOIC ON Semiconductor　FDS3672

Features

  • UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:7.5 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:23 mΩ
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOIC
  • Mounting Type:Surface Mount
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Typical Turn-Off Delay Time:37 ns
  • CODE No.:671-0491
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Order No. 64-0187-46
Model No. FDS3672
Standard price JPY: 1,610 USD: 10.02
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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