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ON Semiconductor

64-0187-33　FDN357N N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 ON Semiconductor　FDN357N

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1bag(3000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:1.9 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:600 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:SOT-23
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:500 mW
  • Number of Elements per Chip:1
  • CODE No.:166-1718
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Order No. 64-0187-33
Model No. FDN357N
Standard price JPY: 116,000 USD: 721.75
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(3000pieces)
Stock in Japan
Supplier Stock

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