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ON Semiconductor

64-0186-67　FDME1024NZT Dual N-Channel MOSFET, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor　FDME1024NZT

Features

  • PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1bag(5000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:3.8 A
  • Maximum Drain Source Voltage:20 V
  • Maximum Drain Source Resistance:160 mΩ
  • Minimum Gate Threshold Voltage:0.4V
  • Maximum Gate Source Voltage:-8 V, +8 V
  • Package Type:MicroFET Thin
  • Mounting Type:Surface Mount
  • Pin Count:6
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:1.4 W
  • Transistor Material:Si
  • CODE No.:166-2713
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Order No. 64-0186-67
Model No. FDME1024NZT
Standard price JPY: 287,000 USD: 1,799.04
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5000pieces)
Stock in Japan
Supplier Stock

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