64-0186-67 FDME1024NZT Dual N-Channel MOSFET, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1024NZT
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64-0186-67 FDME1024NZT Dual N-Channel MOSFET, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1024NZT 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-0186-67 FDME1024NZT Dual N-Channel MOSFET, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1024NZT
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64-0186-67 FDME1024NZT Dual N-Channel MOSFET, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1024NZT 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
ON Semiconductor 64-0186-67 FDME1024NZT Dual N-Channel MOSFET, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1024NZT
特徴
- PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1bag(5000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:3.8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:160 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:MicroFET Thin
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.4 W
- Transistor Material:Si
- CODE No.:166-2713
Order No. 64-0186-67 Model No. FDME1024NZT Standard price JPY: 287,000 USD: 1,799.04 Excange rate 1USD= 159.53JPY
Valid price in JapanQuantity 1bag(5000pieces) Stock in Japan 
Supplier Stock
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