64-0186-64 [Discontinued]FDME1034CZT Dual N/P-Channel MOSFET, 2.6 A, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1034CZT
Features
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity:1bag(5000pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:2.6 A, 3.8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:160 mΩ, 530 mΩ
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:-8 V, +8 V
- Package Type:MicroFET Thin
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:1.4 W
- Series:PowerTrench
- CODE No.:166-2557
| Order No. | 64-0186-64 | |
|---|---|---|
| Model No. | FDME1034CZT | |
| Standard price |
JPY: 448,000
USD: 2,808.25
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDME1034CZT Dual N/P-Channel MOSFET, 2.6 A, 3.8 A, 20 V PowerTrench, 6-Pin MicroFET Thin ON Semiconductor FDME1034CZT](https://aimg.as-1.co.jp/c/64/0186/64/64018661.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)