64-0114-99 ［Discontinued］IRLML6302TRPBF P-Channel MOSFET, 780 mA, 20 V HEXFET, 3-Pin SOT-23 Infineon IRLML6302TRPBF
Features
- P-Channel Power MOSFET 12V to 20V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1bag(5pieces)
- Channel Type:P
- Maximum Continuous Drain Current:780 mA
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:600 mΩ
- Maximum Gate Threshold Voltage:1.5V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:540 mW
- Typical Input Capacitance @ Vds:97 pF @ 15 V
- CODE No.:610-6851
| Order No. | 64-0114-99 | |
|---|---|---|
| Model No. | IRLML6302TRPBF | |
| Standard price |
JPY: 240
USD: 1.51
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
||
| Stock in Japan | - | |