64-0114-97 ［Discontinued］IRF7311PBF Dual N-Channel MOSFET, 6.6 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7311PBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity:1piece/bag
- Channel Type:N
- Maximum Continuous Drain Current:6.6 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:29 mΩ
- Maximum Gate Threshold Voltage:0.7V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Typical Turn-Off Delay Time:38 ns
- CODE No.:610-6687
| Order No. | 64-0114-97 | |
|---|---|---|
| Model No. | IRF7311PBF | |
| Standard price |
JPY: 110
USD: 0.69
Excange rate 1USD= 159.42JPY
Valid price in Japan |
|
| Quantity | 1piece/bag | |
|
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| Stock in Japan | - | |