64-0105-67 ［Discontinued］Infineon IRGPS60B120KDP IGBT, 105 A 1200 V, 3-Pin TO-274AA IRGPS60B120KDP
Features
- Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations
Spec
- Quantity:1piece/bag
- Maximum Continuous Collector Current:105 A
- Maximum Collector Emitter Voltage:1200 V
- Maximum Gate Emitter Voltage:±20V
- Maximum Power Dissipation:595 W
- Package Type:TO-274AA
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Transistor Configuration:Single
- Length:16.1mm
- Width:5.5mm
- Height:20.8mm
- Dimensions:16.1 x 5.5 x 20.8mm
- Minimum Operating Temperature:-55 °C
- CODE No.:784-0313
| Order No. | 64-0105-67 | |
|---|---|---|
| Model No. | IRGPS60B120KDP | |
| Standard price |
JPY: 2,550
USD: 15.87
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece/bag | |
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| Stock in Japan | - | |