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Infineon

64-0105-16　［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF

FeaturesFeatures class="init"> ［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF 64-0105-16 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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Infineon

64-0105-16　［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF

Features

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

SpecSpec class="init"> ［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF 64-0105-16 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
Infineon

64-0105-16　［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF

特徴

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

SpecASONEs="init"> ［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF 64-0105-16 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

Listed products : 3 milion products
How to use
Cách sử dụng
Contact us
Infineon

64-0105-16　［Discontinued］IRFI1010NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220FP Infineon　IRFI1010NPBF

Features

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece/bag
  • Channel Type:N
  • Maximum Continuous Drain Current:49 A
  • Maximum Drain Source Voltage:55 V
  • Maximum Drain Source Resistance:12 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:TO-220FP
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:58 W
  • Dimensions:10.75 x 4.83 x 9.8mm
  • CODE No.:542-9579
  •  
Order No. 64-0105-16
Model No. IRFI1010NPBF
Standard price JPY: 210 USD: 1.31
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1piece/bag
  Discontinued
Stock in Japan -

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