64-0103-93 [Discontinued]IRF7314PBF Dual P-Channel MOSFET, 5.3 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7314PBF
Features
- Dual P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual P-channel configuration.
Spec
- Quantity:1bag(95pieces)
- Channel Type:P
- Maximum Continuous Drain Current:5.3 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:58 mΩ
- Maximum Gate Threshold Voltage:0.7V
- Minimum Gate Threshold Voltage:0.7V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Typical Turn-On Delay Time:15 ns
- CODE No.:178-1522
| Order No. | 64-0103-93 | |
|---|---|---|
| Model No. | IRF7314PBF | |
| Standard price |
JPY: 8,050
USD: 50.46
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(95pieces) | |
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| Stock in Japan | - | |
![[Discontinued]IRF7314PBF Dual P-Channel MOSFET, 5.3 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7314PBF](https://aimg.as-1.co.jp/c/64/0103/93/64010393.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)