64-0103-86 ［Discontinued］IRF7104PBF Dual P-Channel MOSFET, 2.3 A, 20 V HEXFET, 8-Pin SOIC Infineon IRF7104PBF
Features
- P-Channel Power MOSFET 12V to 20V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity:1piece/bag
- Channel Type:P
- Maximum Continuous Drain Current:2.3 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:250 mΩ
- Maximum Gate Threshold Voltage:3V
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-12 V, +12 V
- Package Type:SOIC
- Mounting Type:Surface Mount
- Transistor Configuration:Isolated
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2 W
- Dimensions:5 x 4 x 1.5mm
- CODE No.:540-9626
| Order No. | 64-0103-86 | |
|---|---|---|
| Model No. | IRF7104PBF | |
| Standard price |
JPY: 110
USD: 0.68
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1piece/bag | |
|
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| Stock in Japan | - | |