64-0086-07 Nexperia PBSS4160T,215 NPN Transistor, 900 mA, 60 V, 3-Pin SOT-23 PBSS4160T,215
Features
- Low Saturation Voltage NPN Transistors. A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Spec
- Quantity:1bag(25pieces)
- Transistor Type:NPN
- Maximum DC Collector Current:900 mA
- Maximum Collector Emitter Voltage:60 V
- Package Type:SOT-23 (TO-236AB)
- Mounting Type:Surface Mount
- Maximum Power Dissipation:1.25 W
- Minimum DC Current Gain:100
- Transistor Configuration:Single
- Maximum Collector Base Voltage:80 V
- Maximum Emitter Base Voltage:5 V
- Maximum Operating Frequency:220 MHz
- Pin Count:3
- Number of Elements per Chip:1
- Dimensions:1 x 3 x 1.4mm
- CODE No.:518-1536
| Order No. | 64-0086-07 | |
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| Model No. | PBSS4160T,215 | |
| Standard price |
JPY: 1,100
USD: 6.84
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
| Stock in Japan |
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| Supplier Stock |
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