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ON Semiconductor

64-0077-42　NTJD4158CT1G Dual N/P-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 ON Semiconductor　NTJD4158CT1G

Features

  • Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology.

Spec

  • Quantity:1set(25pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:250 mA, 880 mA
  • Maximum Drain Source Voltage:20 V, 30 V
  • Maximum Drain Source Resistance:2.5 Ω, 500 mΩ
  • Maximum Gate Threshold Voltage:1.5V
  • Maximum Gate Source Voltage:-20 V, -12 V, +12 V, +20 V
  • Package Type:SOT-363 (SC-88)
  • Mounting Type:Surface Mount
  • Transistor Configuration:Isolated
  • Channel Mode:Enhancement
  • Category:Small Signal
  • Maximum Power Dissipation:270 mW
  • Number of Elements per Chip:2
  • CODE No.:780-0614
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Order No. 64-0077-42
Model No. NTJD4158CT1G
Standard price JPY: 1,390 USD: 8.71
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(25pieces)
Stock in Japan
Supplier Stock

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