64-0077-40 NTJD1155LT1G Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 ON Semiconductor NTJD1155LT1G
Features
- Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology.
Spec
- Quantity:1set(20pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:1.3 A
- Maximum Drain Source Voltage:8 V
- Maximum Drain Source Resistance:320 mΩ
- Maximum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:+8 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Maximum Power Dissipation:400 mW
- Transistor Material:Si
- CODE No.:780-0605
| Order No. | 64-0077-40 | |
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| Model No. | NTJD1155LT1G | |
| Standard price |
JPY: 1,040
USD: 6.52
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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