64-0077-39 [Discontinued]NTJD4105CT1G Dual N/P-Channel MOSFET, 1.1 A, 910 mA, 8 V, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4105CT1G
Features
- Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology.
Spec
- Quantity:1bag(25pieces)
- Channel Type:N, P
- Maximum Continuous Drain Current:1.1 A, 910 mA
- Maximum Drain Source Voltage:8 V, 20 V
- Maximum Drain Source Resistance:445 mΩ, 900 mΩ
- Maximum Gate Threshold Voltage:1.5V
- Maximum Gate Source Voltage:-12 V, -8 V, +12 V, +8 V
- Package Type:SOT-363 (SC-88)
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Small Signal
- Maximum Power Dissipation:550 mW
- Typical Turn-On Delay Time:13 ns, 83 ns
- CODE No.:780-0602
| Order No. | 64-0077-39 | |
|---|---|---|
| Model No. | NTJD4105CT1G | |
| Standard price |
JPY: 970
USD: 6.08
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NTJD4105CT1G Dual N/P-Channel MOSFET, 1.1 A, 910 mA, 8 V, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4105CT1G](https://aimg.as-1.co.jp/c/64/0077/39/64007692.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)