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ON Semiconductor

64-0077-19　NTJD1155LT1G Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 ON Semiconductor　NTJD1155LT1G

Features

  • Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ‘s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ‘s trench technology.

Spec

  • Quantity:1set(3000pieces)
  • Channel Type:N, P
  • Maximum Continuous Drain Current:1.3 A
  • Maximum Drain Source Voltage:8 V
  • Maximum Drain Source Resistance:320 mΩ
  • Maximum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:+8 V
  • Package Type:SOT-363 (SC-88)
  • Mounting Type:Surface Mount
  • Pin Count:6
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:400 mW
  • Dimensions:2.2 x 1.35 x 1mm
  • CODE No.:163-1114
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Order No. 64-0077-19
Model No. NTJD1155LT1G
Standard price JPY: 51,000 USD: 319.69
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(3000pieces)
Stock in Japan
Supplier Stock

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