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Infineon

64-0065-33　［Discontinued］IPB009N03LGATMA1 N-Channel MOSFET, 180 A, 30 V OptiMOS 3, 7-Pin D2PAK Infineon　IPB009N03LGATMA1

Features

  • Infineon OptiMOS™3 Power MOSFETs, up to 40V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:180 A
  • Maximum Drain Source Voltage:30 V
  • Maximum Drain Source Resistance:1.3 mΩ
  • Maximum Gate Threshold Voltage:2.2V
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:D2PAK (TO-263)
  • Mounting Type:Surface Mount
  • Pin Count:7
  • Channel Mode:Enhancement
  • Maximum Power Dissipation:250 W
  • Number of Elements per Chip:1
  • CODE No.:754-5406
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Order No. 64-0065-33
Model No. IPB009N03LGATMA1
Standard price JPY: 400 USD: 2.77
Excange rate 1USD= 144.46JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -

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