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ON Semiconductor

64-0042-23　［Discontinued］FQU2N60CTU N-Channel MOSFET, 1.9 A, 600 V QFET, 3-Pin IPAK ON Semiconductor　FQU2N60CTU

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:1.9 A
  • Maximum Drain Source Voltage:600 V
  • Maximum Drain Source Resistance:4.7 Ω
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-30 V, +30 V
  • Package Type:IPAK (TO-251)
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:2.5 W
  • Typical Input Capacitance @ Vds:180 pF@ 25 V
  • CODE No.:671-5357
  •  
Order No. 64-0042-23
Model No. FQU2N60CTU
Standard price JPY: 520 USD: 3.24
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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