64-0042-23 ［Discontinued］FQU2N60CTU N-Channel MOSFET, 1.9 A, 600 V QFET, 3-Pin IPAK ON Semiconductor FQU2N60CTU
Features
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:1.9 A
- Maximum Drain Source Voltage:600 V
- Maximum Drain Source Resistance:4.7 Ω
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-30 V, +30 V
- Package Type:IPAK (TO-251)
- Mounting Type:Through Hole
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.5 W
- Typical Input Capacitance @ Vds:180 pF@ 25 V
- CODE No.:671-5357
| Order No. | 64-0042-23 | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Model No. | FQU2N60CTU | |||||||||||||||
| Standard price |
JPY: 520
USD: 3.26
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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64-0042-23 ［Discontinued］FQU2N60CTU N-Channel MOSFET, 1.9 A, 600 V QFET, 3-Pin IPAK ON Semiconductor FQU2N60CTU特徴
仕様
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