ON Semiconductor

64-0026-12　［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor　FDD3672

印刷

特徴

UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

仕様

Quantity:1set(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:6.5 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:28 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:135 W
Typical Turn-On Delay Time:11 ns
CODE No.:166-2403

アズワン品番 64-0026-12

Model No. FDD3672

標準価格

JPY: 215,000 USD: 1,348.64

Excange rate 1USD= 159.42JPY
Valid price in Japan

QuantityQuantityass="init"> ［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor　FDD3672 64-0026-12 【AXEL GLOBAL】 アズワン

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ON Semiconductor

64-0026-12　［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor　FDD3672

印刷

特徴

UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

仕様

Quantity:1set(2500pieces)
Channel Type:N
Maximum Continuous Drain Current:6.5 A
Maximum Drain Source Voltage:100 V
Maximum Drain Source Resistance:28 mΩ
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:-20 V, +20 V
Package Type:DPAK (TO-252)
Mounting Type:Surface Mount
Pin Count:3
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:135 W
Typical Turn-On Delay Time:11 ns
CODE No.:166-2403

アズワン品番	64-0026-12
型番	FDD3672
標準価格	JPY: 215,000 USD: 1,348.64 Excange rate 1USD= 159.42JPY Valid price in Japan
Quantity	1set(2500pieces)

Stock in Japan	-

This page is the page of ［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

64-0026-12　［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor　FDD3672

Features

Spec

64-0026-12　［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor　FDD3672

特徴

仕様

64-0026-12　［Discontinued］FDD3672 N-Channel MOSFET, 6.5 A, 100 V UltraFET, 3-Pin DPAK ON Semiconductor　FDD3672

特徴

仕様