64-0025-43 SPD08P06PGBTMA1 P-Channel MOSFET, 8.8 A, 60 V SIPMOS, 3-Pin DPAK Infineon SPD08P06PGBTMA1
特徴
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
仕様
- Quantity:1bag(10pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8.8 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:300 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2.1V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:42 W
- Typical Turn-Off Delay Time:48 ns
- CODE No.:462-3247
| Order No. | 64-0025-43 | ||||||||||||||
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| Model No. | SPD08P06PGBTMA1 | ||||||||||||||
| Standard price |
JPY: 970
USD: 6.04
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | ||||||||||||||
| 在庫数 |
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64-0025-43 SPD08P06PGBTMA1 P-Channel MOSFET, 8.8 A, 60 V SIPMOS, 3-Pin DPAK Infineon SPD08P06PGBTMA1特徴
仕様
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