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ON Semiconductor

63-9961-40　RFP12N10L N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB ON Semiconductor　RFP12N10L

Features

  • Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Spec

  • Quantity:1set(50pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:12 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:200 mΩ
  • Minimum Gate Threshold Voltage:1V
  • Maximum Gate Source Voltage:-10 V, +10 V
  • Package Type:TO-220AB
  • Mounting Type:Through Hole
  • Transistor Configuration:Single
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:60 W
  • Length:10.67mm
  • CODE No.:368-3197
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Order No. 63-9961-40
Model No. RFP12N10L
Standard price JPY: 7,440 USD: 46.64
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(50pieces)
Stock in Japan
Supplier Stock

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