63-9955-78 [Discontinued]FDV302P P-Channel MOSFET, 120 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV302P
Features
- Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:120 mA
- Maximum Drain Source Voltage:25 V
- Maximum Drain Source Resistance:10 Ω
- Minimum Gate Threshold Voltage:0.65V
- Maximum Gate Source Voltage:+8 V
- Package Type:SOT-23
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:350 mW
- Dimensions:2.92 x 1.3 x 0.93mm
- CODE No.:166-2480
| Order No. | 63-9955-78 | |
|---|---|---|
| Model No. | FDV302P | |
| Standard price |
JPY: 16,900
USD: 105.15
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]FDV302P P-Channel MOSFET, 120 mA, 25 V, 3-Pin SOT-23 ON Semiconductor FDV302P](https://aimg.as-1.co.jp/c/63/9955/78/63995578.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)