63-9945-90 RFD14N05LSM N-Channel MOSFET, 14 A, 50 V, 3-Pin DPAK ON Semiconductor RFD14N05LSM
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:14 A
- Maximum Drain Source Voltage:50 V
- Maximum Drain Source Resistance:100 mΩ
- Minimum Gate Threshold Voltage:1V
- Maximum Gate Source Voltage:-10 V, +10 V
- Package Type:DPAK (TO-252)
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:48 W
- Maximum Operating Temperature:+175 °C
- CODE No.:325-7619
| Order No. | 63-9945-90 | |
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| Model No. | RFD14N05LSM | |
| Standard price |
JPY: 200
USD: 1.24
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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