63-9812-23 [Discontinued]NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLT1G
Spec
- Quantity:1bag(10pieces)
- Channel Type:N
- Maximum Continuous Drain Current:111 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:5.8 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:±20 V
- Package Type:DFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Dimensions:6.1 x 5.1 x 1.05mm
- CODE No.:172-3361
| Order No. | 63-9812-23 | |
|---|---|---|
| Model No. | NVMFD5C650NLT1G | |
| Standard price |
JPY: 2,120
USD: 13.29
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLT1G](https://aimg.as-1.co.jp/c/63/9812/23/63981223.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)