QuoteQuotes="init"> [Discontinued]NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLT1G 63-9812-23 【AXEL GLOBAL】 アズワン 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-9812-23 [Discontinued]NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLT1G AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments RS Components 63-9812-23 [Discontinued]NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLT1G ON Semiconductor 63-9812-23 [Discontinued]NVMFD5C650NLT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLT1G 印刷 PDF 仕様 Quantity:1bag(10pieces) Channel Type:N Maximum Continuous Drain Current:111 A Maximum Drain Source Voltage:60 V Maximum Drain Source Resistance:5.8 mΩ Maximum Gate Threshold Voltage:2.2V Minimum Gate Threshold Voltage:1.2V Maximum Gate Source Voltage:±20 V Package Type:DFN Mounting Type:Surface Mount Pin Count:8 Channel Mode:Enhancement Category:Power MOSFET Maximum Power Dissipation:125 W Dimensions:6.1 x 5.1 x 1.05mm CODE No.:172-3361 アズワン品番 63-9812-23 型番 NVMFD5C650NLT1G 標準価格 JPY: 2,120 USD: 13.30 Excange rate 1USD= 159.42JPYValid price in Japan 入り数 1bag(10pieces) 在庫数 - Quote Other Requests
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