63-9811-70 [Discontinued]NVMFD5C650NLWFT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLWFT1G
Spec
- Quantity:1set(1500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:111 A
- Maximum Drain Source Voltage:60 V
- Maximum Drain Source Resistance:5.8 mΩ
- Maximum Gate Threshold Voltage:2.2V
- Minimum Gate Threshold Voltage:1.2V
- Maximum Gate Source Voltage:±20 V
- Package Type:DFN
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:125 W
- Typical Input Capacitance @ Vds:2546 pF @ 25 V
- CODE No.:172-3293
| Order No. | 63-9811-70 | |
|---|---|---|
| Model No. | NVMFD5C650NLWFT1G | |
| Standard price |
JPY: 884,000
USD: 5,541.28
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(1500pieces) | |
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| Stock in Japan | - | |
![[Discontinued]NVMFD5C650NLWFT1G Dual N-Channel MOSFET, 111 A, 60 V NVMFD5C650NL, 8-Pin DFN ON Semiconductor NVMFD5C650NLWFT1G](https://aimg.as-1.co.jp/c/63/9811/70/63981170.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)