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Infineon

63-9794-10　BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon　BSC12DN20NS3GATMA1

Spec

  • Quantity:1set(5000pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:11.3 A
  • Maximum Drain Source Voltage:200 V
  • Maximum Drain Source Resistance:125 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:20 V
  • Package Type:TDSON
  • Mounting Type:Surface Mount
  • Pin Count:8
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:50 W
  • Typical Turn-Off Delay Time:10 ns
  • CODE No.:170-2290
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Order No. 63-9794-10
Model No. BSC12DN20NS3GATMA1
Standard price JPY: 660,000 USD: 4,137.15
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1set(5000pieces)
Stock in Japan
Supplier Stock

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