Listed products : 3 milion productsListed products : 3 milion products"init">
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1 【AXEL GLOBAL】 アズワン
取扱点数300万点
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63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
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63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
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すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
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Office Supplies and Stationery
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Specially Ordered Item
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AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Infineon
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Print
PDF
仕様
Quantity:1set(5000pieces)
Channel Type:N
Maximum Continuous Drain Current:11.3 A
Maximum Drain Source Voltage:200 V
Maximum Drain Source Resistance:125 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:20 V
Package Type:TDSON
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:50 W
Typical Turn-Off Delay Time:10 ns
CODE No.:170-2290
Order No.Order No.ss="init">
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1 【AXEL GLOBAL】 アズワン
取扱点数300万点
How to use
English
China
Indonesia
Korea
Thailand
Vietnam
Contact us
すべてのカテゴリ
すべてのカテゴリ
Lab Instruments & Supplies
Factory Work Tools & Supplies
Clean Room/Anti Static Supplies
Medical, Nursing & Care Products
Food Sanitation & Inspection
Office Supplies and Stationery
Emergency Supplies
Education, Learning Supplies
Specially Ordered Item
Featured Products
Contact us
Quote
Other Requests
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
Electronics Components, Power & Connectors
Semiconductors
Discrete Semiconductors
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
AXEL GLOBAL
カテゴリ一覧
Lab Instruments & Supplies
Electronic/Electrical Parts and Controll Equipments
RS Components
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Infineon
63-9794-10 BSC12DN20NS3GATMA1 N-Channel MOSFET, 11.3 A, 200 V BSC12DN20NS3 G, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
印刷
PDF
仕様
Quantity:1set(5000pieces)
Channel Type:N
Maximum Continuous Drain Current:11.3 A
Maximum Drain Source Voltage:200 V
Maximum Drain Source Resistance:125 mΩ
Maximum Gate Threshold Voltage:4V
Minimum Gate Threshold Voltage:2V
Maximum Gate Source Voltage:20 V
Package Type:TDSON
Mounting Type:Surface Mount
Pin Count:8
Channel Mode:Enhancement
Category:Power MOSFET
Maximum Power Dissipation:50 W
Typical Turn-Off Delay Time:10 ns
CODE No.:170-2290
アズワン品番
63-9794-10
Model No.
BSC12DN20NS3GATMA1
標準価格
JPY:
660,000
USD:
4,106.52
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1set(5000pieces)
在庫数
Supplier Stock
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