63-9794-06 IPD068N10N3GATMA1 N-Channel MOSFET, 90 A, 100 V IPD068N10N3 G, 3 + 2 Tab-Pin DPAK Infineon IPD068N10N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:90 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:12.3 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:20 V
- Package Type:TO-252
- Mounting Type:Surface Mount
- Pin Count:3 + 2 Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Length:6.73mm
- CODE No.:170-2284
| Order No. | 63-9794-06 | |
|---|---|---|
| Model No. | IPD068N10N3GATMA1 | |
| Standard price |
JPY: 591,000
USD: 3,677.20
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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