63-9794-05 IPD053N08N3GATMA1 N-Channel MOSFET, 90 A, 80 V IPD053N08N3 G, 3 + 2 Tab-Pin DPAK Infineon IPD053N08N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
仕様
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:90 A
- Maximum Drain Source Voltage:80 V
- Maximum Drain Source Resistance:9.5 mΩ
- Maximum Gate Threshold Voltage:3.5V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:20 V
- Package Type:TO-252
- Mounting Type:Surface Mount
- Pin Count:3 + 2 Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:150 W
- Minimum Operating Temperature:-55 °C
- CODE No.:170-2283
| アズワン品番 | 63-9794-05 | |
|---|---|---|
| 型番 | IPD053N08N3GATMA1 | |
| Standard price |
JPY: 523,000
USD: 3,278.38
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
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