63-9793-99 IPD25CN10NGATMA1 N-Channel MOSFET, 35 A, 100 V IPD25CN10N G, 3 + 2 Tab-Pin DPAK Infineon IPD25CN10NGATMA1
Features
- Infineon OptiMOS™2 Power MOSFET Family. Infineon s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
Spec
- Quantity:1set(2500pieces)
- Channel Type:N
- Maximum Continuous Drain Current:35 A
- Maximum Drain Source Voltage:100 V
- Maximum Drain Source Resistance:26 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:20 V
- Package Type:TO-252
- Mounting Type:Surface Mount
- Pin Count:3 + 2 Tab
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:71 W
- Dimensions:6.73 x 7.47 x 2.41mm
- CODE No.:170-2266
| Order No. | 63-9793-99 | |
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| Model No. | IPD25CN10NGATMA1 | |
| Standard price |
JPY: 292,000
USD: 1,830.38
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(2500pieces) | |
| Stock in Japan |
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| Supplier Stock |
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