63-9763-21 ［Discontinued］SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3
-
PrintPrintlass="init">
［Discontinued］SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3 63-9763-21 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Vishay 63-9763-21 ［Discontinued］SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:45 mΩ
- Maximum Gate Threshold Voltage:-0.9V
- Minimum Gate Threshold Voltage:-0.4V
- Maximum Gate Source Voltage:±8 V
- Package Type:TSOP6
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.97 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-4443
Order No. 63-9763-21 Model No.Model No. class="init"> ［Discontinued］SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3 63-9763-21 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Vishay 63-9763-21 ［Discontinued］SI3493BDV-T1-GE3 P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP6 Vishay SI3493BDV-T1-GE3
仕様
- Quantity:1set(3000pieces)
- Channel Type:P
- Maximum Continuous Drain Current:8 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:45 mΩ
- Maximum Gate Threshold Voltage:-0.9V
- Minimum Gate Threshold Voltage:-0.4V
- Maximum Gate Source Voltage:±8 V
- Package Type:TSOP6
- Mounting Type:Surface Mount
- Pin Count:6
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:2.97 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-4443
アズワン品番 63-9763-21 型番 SI3493BDV-T1-GE3 標準価格 JPY: 154,140 USD: 966.88 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1set(3000pieces) ![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)
在庫数 - -
