63-9763-16 [Discontinued]SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay SI2302DDS-T1-GE3
Spec
- Quantity:1set(3000pieces)
- Channel Type:N
- Maximum Continuous Drain Current:2.6 A
- Maximum Drain Source Voltage:20 V
- Maximum Drain Source Resistance:75 mΩ
- Maximum Gate Threshold Voltage:0.85V
- Minimum Gate Threshold Voltage:0.4V
- Maximum Gate Source Voltage:±8 V
- Package Type:SOT-363
- Mounting Type:Surface Mount
- Transistor Configuration:Single
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:0.71 W
- Minimum Operating Temperature:-55 °C
- CODE No.:146-4437
| Order No. | 63-9763-16 | |
|---|---|---|
| Model No. | SI2302DDS-T1-GE3 | |
| Standard price |
JPY: 73,700
USD: 461.98
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1set(3000pieces) | |
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| Stock in Japan | - | |
![[Discontinued]SI2302DDS-T1-GE3 N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363 Vishay SI2302DDS-T1-GE3](https://aimg.as-1.co.jp/c/63/9763/16/63976316.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)