63-9742-25 BSM180D12P3C007 Dual SiC N-Channel SiC Power Module, 180 A, 1200 V BSM, 4-Pin C ROHM BSM180D12P3C007
Features
- BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes. SiC Power Modules, ROHM. The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source. Half-Bridge configuration Low Surge Current Low Power Switching Losses High-Speed Switching Low Operating Temperature
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:180 A
- Maximum Drain Source Voltage:1200 V
- Maximum Gate Threshold Voltage:5.6V
- Minimum Gate Threshold Voltage:2.7V
- Package Type:C
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:880 W
- Minimum Operating Temperature:-40 °C
- CODE No.:144-2259
| Order No. | 63-9742-25 | |
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| Model No. | BSM180D12P3C007 | |
| Standard price |
JPY: 156,000
USD: 978.55
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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