63-9742-23 BSM120D12P2C005 Dual SiC N-Channel SiC Power Module, 120 A, 1200 V BSM, 4-Pin C ROHM BSM120D12P2C005
Features
- BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes. SiC Power Modules, ROHM. The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source. Half-Bridge configuration Low Surge Current Low Power Switching Losses High-Speed Switching Low Operating Temperature
Spec
- Quantity:1piece
- Channel Type:N
- Maximum Continuous Drain Current:120 A
- Maximum Drain Source Voltage:1200 V
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:1.6V
- Package Type:C
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:935 W
- Typical Turn-Off Delay Time:170 ns
- CODE No.:144-2257
| Order No. | 63-9742-23 | |
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| Model No. | BSM120D12P2C005 | |
| Standard price |
JPY: 112,000
USD: 696.86
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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