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ROHM

63-9742-22　［Discontinued］BSM080D12P2C008 Dual SiC N-Channel SiC Power Module, 80 A, 1200 V BSM, 4-Pin Six Pack ROHM　BSM080D12P2C008

Features

  • BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes. SiC Power Modules, ROHM. The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source. Half-Bridge configuration Low Surge Current Low Power Switching Losses High-Speed Switching Low Operating Temperature

Spec

  • Quantity:1piece
  • Channel Type:N
  • Maximum Continuous Drain Current:80 A
  • Maximum Drain Source Voltage:1200 V
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:1.6V
  • Package Type:Six Pack
  • Mounting Type:Surface Mount
  • Pin Count:4
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:600 W
  • Typical Turn-On Delay Time:20 ns
  • CODE No.:144-2256
  •  
Order No. 63-9742-22
Model No. BSM080D12P2C008
Standard price JPY: 42,600 USD: 267.03
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -

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