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ROHM

63-9742-19　［Discontinued］BSM180D12P2C101 Dual SiC N-Channel SiC Power Module, 180 A, 1200 V BSM, 4-Pin C ROHM　BSM180D12P2C101

Features

  • BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes. SiC Power Modules, ROHM. The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source. Half-Bridge configuration Low Surge Current Low Power Switching Losses High-Speed Switching Low Operating Temperature

Spec

  • Quantity:1set(12pieces)
  • Channel Type:N
  • Maximum Continuous Drain Current:180 A
  • Maximum Drain Source Voltage:1200 V
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:1.6V
  • Package Type:C
  • Mounting Type:Surface Mount
  • Pin Count:4
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:175 W
  • Transistor Material:SiC
  • CODE No.:144-2253
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Order No. 63-9742-19
Model No. BSM180D12P2C101
Standard price JPY: 704,000 USD: 4,380.29
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1set(12pieces)
  Discontinued
Stock in Japan -

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