63-9742-18 ［Discontinued］BSM080D12P2C008 Dual SiC N-Channel SiC Power Module, 80 A, 1200 V BSM, 4-Pin Six Pack ROHM BSM080D12P2C008
Features
- BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes. SiC Power Modules, ROHM. The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source. Half-Bridge configuration Low Surge Current Low Power Switching Losses High-Speed Switching Low Operating Temperature
Spec
- Quantity:1set(12pieces)
- Channel Type:N
- Maximum Continuous Drain Current:80 A
- Maximum Drain Source Voltage:1200 V
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:1.6V
- Package Type:Six Pack
- Mounting Type:Surface Mount
- Pin Count:4
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:600 W
- Minimum Operating Temperature:-40 °C
- CODE No.:144-2251
| Order No. | 63-9742-18 | |
|---|---|---|
| Model No. | BSM080D12P2C008 | |
| Standard price |
JPY: 510,000
USD: 3,173.22
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1set(12pieces) | |
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| Stock in Japan | - | |