63-9736-87 Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247 IKW30N65ES5XKSA1
Features
- Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C
Spec
- Quantity:1bag(10pieces)
- Maximum Continuous Collector Current:62 A
- Maximum Collector Emitter Voltage:650 V
- Maximum Gate Emitter Voltage:±20 V, ±30 (Transient) V
- Maximum Power Dissipation:188 W
- Package Type:TO-247
- Mounting Type:Through Hole
- Channel Type:N
- Pin Count:3
- Switching Speed:30kHz
- Transistor Configuration:Single
- Length:16.13mm
- Width:5.21mm
- Height:21.1mm
- Dimensions:16.13 x 5.21 x 21.1mm
- Maximum Operating Temperature:+175 °C
- CODE No.:144-1201
| Order No. | 63-9736-87 | |
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| Model No. | IKW30N65ES5XKSA1 | |
| Standard price |
JPY: 4,430
USD: 27.56
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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