63-8415-51 SIR632DP-T1-RE3 N-Channel MOSFET, 29 A, 150 V, 8-Pin SO Vishay SIR632DP-T1-RE3
Features
- N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
Spec
- Quantity:1bag(5pieces)
- Channel Type:N
- Maximum Continuous Drain Current:29 A
- Maximum Drain Source Voltage:150 V
- Maximum Drain Source Resistance:41 mΩ
- Maximum Gate Threshold Voltage:4V
- Minimum Gate Threshold Voltage:2V
- Maximum Gate Source Voltage:-20 V, +20 V
- Package Type:SO
- Mounting Type:Surface Mount
- Pin Count:8
- Channel Mode:Enhancement
- Category:Power MOSFET
- Maximum Power Dissipation:69.5 W
- Minimum Operating Temperature:-55 °C
- CODE No.:134-9723
| Order No. | 63-8415-51 | |
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| Model No. | SIR632DP-T1-RE3 | |
| Standard price |
JPY: 1,720
USD: 10.79
Excange rate 1USD= 159.42JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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